wmk_product_02

2021 Latest Design Si Type - Gallium Antimonide GaSb – WMC


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No. Items Standard Specification
1 Size 2″ 3″ 4″
2 Diameter mm 50.5±0.5 76.2±0.5 100±0.5
3 Growth Method LEC LEC LEC
4 Conductivity P/(Zn-doped or un-doped), N/Te-doped
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 500±25 600±25 800±25
7 Orientation Flat mm 16±2 22±1 32.5±1
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 200-3500 or as required
10 Carrier Concentration cm-3 (1-100)E17 or as required
11 TTV μm max 15 15 15
12 Bow μm max 15 15 15
13 Warp μm max 20 20 20
14 Dislocation Density cm-2 max 500 1000 2000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in Aluminum bag.
Linear Formula GaSb
Molecular Weight 191.48
Crystal structure Zinc blende
Apperance Gray crystalline solid
Melting Point 710°C
Boiling Point N/A
Density at 300K 5.61 g/cm3
Energy Gap 0.726 eV
Intrinsic resistivity 1E3 Ω-cm
CAS Number 12064-03-8
EC Number 235-058-8
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  • UN Standard Packing Available Upon Request
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  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
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