FZ Silicon Wafer

Description

FZ Single Crystal Silicon Wafer,  Float-zone (FZ) Silicon is extremely pure silicon with a very low concentration of oxygen and carbon impurities pulled by vertical floating zone refining technology. FZ Floating zone is a single crystal ingot growing method which is different from CZ method wherein seed crystal is attached under polycrystalline silicon ingot, and border between seed crystal and polycrystalline crystal silicon is melted by RF coil induction heating for single crystallization. The RF coil and the melted zone move upwards, and a single crystal solidifies on top of the seed crystal accordingly. Float-zone silicon is ensured with a uniform dopant distribution, lower resistivity variation, restrict amounts of impurities, considerable carrier lifetime, high resistivity target and high purity silicon. Float-zone silicon is a high-purity alternative to crystals grown by the Czochralski CZ process. With the characteristics of this method, FZ Single Crystal Silicon is ideal for use in electronic devices fabrication, such as diodes, thyristors, IGBTs, MEMS, diode, RF device and power MOSFETs, or as the substrate for high-resolution particle or optical detectors, power devices and sensors, high efficiency solar cell etc.

Delivery

FZ Single Crystal Silicon Wafer N-type and P-type conductivity at Western Minmetals (SC) Corporation can be delivered in size of 2, 3, 4, 6 and 8 inch (50mm, 75mm, 100mm, 125mm, 150mm and 200mm) and orientation <100>, <110>, <111> with surface finish of As-cut, Lapped, etched and polished in package of foam box or cassette with carton box outside.