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FZ NTD Silicon Wafer

Description

FZ-NTD Silicon Wafer, known as Float-Zone Neutron Transmutation Doped Silicon Wafer. Oxygen-free, high purity and highest resistivity silicon can be gained by Float-zone FZ ( Zone-Floating) crystal growth, High resistivity FZ silicon crystal is often doped by Neutron Transmutation Doping (NTD) process, in which neutron irradiation on undoped float zone silicon to make silicon isotopes trapped with neutrons and then decay into the desired dopants to achieve the doping goal. Through adjusting the level of neutron radiation, the resistivity can be altered without introducing external dopants and therefore guaranteeing material purity. FZ NTD silicon wafers ( Float Zone Neutron Transmutation Doping Silicon) have premium technical properties of uniform doping concentration and uniform radial resistivity distribution, lowest impurity levels, and high minority carrier lifetime. 

Delivery

As a market leading supplier of NTD silicon for promising power applications, and following the growing demands for top quality level wafers, superior FZ NTD silicon wafer at Western Minmetals (SC) Corporation can be offered to our customers worldwide in various size ranging from 2″, 3″, 4″, 5″ and 6″ diameter (50mm, 75mm, 100mm, 125mm and 150mm) and wide range of resistivity 5 to 2000 ohm.cm in <1-1-1>, <1-1-0>, <1-0-0> orientations with as-cut, lapped, etched and polished surface finish in package of foam box or cassette, or as customized specification to the perfect solution.


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Technical Specification

FZ NTD Silicon Wafer

FZ NTD Silicon wafer

As a market leading supplier of NTD silicon for promising power applications, and following the growing demands for top quality level wafers, superior FZ NTD silicon wafer at Western Minmetals (SC) Corporation can be offered to our customers worldwide in various size ranging from 2″, 3″, 4″, 5″ and 6″  (50, 75, 100, 125 and 150mm) and wide range of resistivity 5 to 2000 ohm-cm in <1-1-1>, <1-1-0>, <1-0-0> orientations with, lapped, etched and polished surface finish in package of foam box or cassette, or as customized specification to the perfect solution.

No. Items Standard Specification
1 Size 2" 3" 4" 5" 6"
2 Diameter 50.8±0.3 76.2±0.3 100±0.5 125±0.5 150±0.5
3 Conductivity n-type n-type n-type n-type n-type
4 Orientation <100>,  <111>, <110>
5 Thickness μm 279, 381, 425, 525, 575, 625, 675, 725 or as required
6 Resistivity Ω-cm 36-44, 44-52, 90-110, 100-250, 200-400 or as required
7 RRV max 8%, 10%, 12%
8 TTV μm max 10 10 10 10 10
9 Bow/Warp μm max 30 30 30 30 30
10 Carrier Lifetime μs >200, >300, >400  or as required
11 Surface Finish As-cut,Lapped,Polished
12 Packing Foam box inside, carton box outside.

Basic Material Parameter

Symbol Si
Atomic Number 14
Atomic Weight 28.09
Element Category Metalloid
Group, Period, Block 14, 3, P
Crystal structure Diamond
Color Dark gray
Melting Point 1414°C, 2577.2°F, 1687.15 K
Boiling Point 3265°C, 5909°F, 3538.15 K
Density at 300K 2.329 g/cm3
Intrinsic resistivity 3.2E5 Ω-cm
CAS Number 7440-21-3
EC Number 231-130-8

FZ-NTD Silicon Wafer is a paramount importance for applications in high power, detector technologies and in semiconductor devices that have to work in extreme conditions or where low resistivity variation across the wafer is required, such as gate-turn-off thyristor GTO, static induction thyristor SITH, giant transistor GTR, insulate-gate bipolar transistor IGBT, extra HV diode PIN. FZ NTD n-type silicon wafer is also as main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, photoelectronic devices, silicon rectifier SR, silicon control SCR, and optical components such as lenses and windows for terahertz applications.

FZ-W1

FZ-W2

PK-26 (2)

/silicon-compound-semiconductors/

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  • Social Responsibility Fulfillment

FZ NTD Silicon Wafer


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