FZ-NTD Silicon Wafer, known as Float-Zone Neutron Transmutation Doped Silicon Wafer. Oxygen-free, high purity and highest resistivity silicon can be gained by Float-zone FZ ( Zone-Floating) crystal growth, High resistivity FZ silicon crystal is often doped by Neutron Transmutation Doping (NTD) process, in which neutron irradiation on undoped float zone silicon to make silicon isotopes trapped with neutrons and then decay into the desired dopants to achieve the doping goal. Through adjusting the level of neutron radiation, the resistivity can be altered without introducing external dopants and therefore guaranteeing material purity. FZ NTD silicon wafers ( Float Zone Neutron Transmutation Doping Silicon) have premium technical properties of uniform doping concentration and uniform radial resistivity distribution, lowest impurity levels, and high minority carrier lifetime.
As a market leading supplier of NTD silicon for promising power applications, and following the growing demands for top quality level wafers, superior FZ NTD silicon wafer at Western Minmetals (SC) Corporation can be offered to our customers worldwide in various size ranging from 2″, 3″, 4″, 5″ and 6″ diameter (50mm, 75mm, 100mm, 125mm and 150mm) and wide range of resistivity 5 to 2000 ohm.cm in <1-1-1>, <1-1-0>, <1-0-0> orientations with as-cut, lapped, etched and polished surface finish in package of foam box or cassette, or as customized specification to the perfect solution.
As a market leading supplier of FZ NTD silicon for promising power applications, and following the growing demands for top quality level wafers, superior FZ NTD silicon wafer at Western Minmetals (SC) Corporation can be offered to our customers worldwide in various size ranging from 2″ to 6″ in diameter (50, 75, 100, 125 and 150mm) and wide range of resistivity 5 to 2000 ohm-cm in <1-1-1>, <1-1-0>, <1-0-0> orientations with lapped, etched and polished surface finish in package of foam box or cassette, carton box outside or as customized specification to the perfect solution.
|4||Orientation||<100>, <111>, <110>|
|5||Thickness μm||279, 381, 425, 525, 575, 625, 675, 725 or as required|
|6||Resistivity Ω-cm||36-44, 44-52, 90-110, 100-250, 200-400 or as required|
|7||RRV max||8%, 10%, 12%|
|8||TTV μm max||10||10||10||10||10|
|9||Bow/Warp μm max||30||30||30||30||30|
|10||Carrier Lifetime μs||>200， >300， >400 or as required|
|12||Packing||Foam box inside, carton box outside.|
Basic Material Parameter
|Group, Period, Block||14, 3, P|
|Melting Point||1414°C, 1687.15 K|
|Boiling Point||3265°C, 3538.15 K|
|Density at 300K||2.329 g/cm3|
|Intrinsic resistivity||3.2E5 Ω-cm|
FZ-NTD Silicon Wafer is a paramount importance for applications in high power, detector technologies and in semiconductor devices that have to work in extreme conditions or where low resistivity variation across the wafer is required, such as gate-turn-off thyristor GTO, static induction thyristor SITH, giant transistor GTR, insulate-gate bipolar transistor IGBT, extra HV diode PIN. FZ NTD n-type silicon wafer is also as main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, photoelectronic devices, silicon rectifier SR, silicon control SCR, and optical components such as lenses and windows for terahertz applications.
FZ NTD Silicon Wafer