Silicon Carbide SiC

Description

Silicon Carbide Wafer SiC, is exceedingly hard, synthetically produced crystalline compound of silicon and carbon by MOCVD method, and exhibits its unique wide band gap and other favorable characteristics of low coefficient of thermal expansion, higher operating temperature, good heat dissipation, lower switching and conduction losses, more energy efficient, high thermal conductivity and stronger electric field breakdown strength, as well as more concentrated currents condition. Silicon Carbide SiC at Western Minmetals (SC) Corporation can be provided in the size of 2″ 3‘ 4“ and 6″ (50mm, 75mm, 100mm, 150mm) diameter, with n-type, semi-insulating or dummy wafer for industrial and laboratory application.Any customized specification is for the perfect solution to our customers worldwide.

Applications

High quality 4H/6H Silicon Carbide SiC wafer is perfect for the manufacturing of many cutting-edge superior fast, high-temperature & high-voltage electronic devices such as Schottky diodes & SBD, high-power switching MOSFETs & JFETs, etc. It is also a desirable material in the research & development of insulated-gate bipolar transistors and thyristors. As an outstanding new generation semiconducting material, Silicon Carbide SiC wafer also serves as an efficient heat spreader in high-power LEDs components, or as a stable and popular substrate for growing GaN layer in favor of future targeted scientific exploration.

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Technical Specification

Silicon Carbide SiC

Silicon Carbide SiC at Western Minmetals (SC) Corporation can be provided in the size of 2″ 3‘ 4“ and 6″ (50mm, 75mm, 100mm, 150mm) diameter, with n-type, semi-insulating or dummy wafer for industrial and laboratory application.Any customized specification is for the perfect solution to our customers worldwide.

Linear Formula	SiC
Molecular Weight	40.1
Crystal structure	Wurtzite
Appearance	Solid
Melting Point	3103±40K
Boiling Point	N/A
Density at 300K	3.21 g/cm³
Energy Gap	(3.00-3.23) eV
Intrinsic resistivity	>1E5 Ω-cm
CAS Number	409-21-2
EC Number	206-991-8

No.	Items	Standard Specification
1	SiC Size	2"	3"	4"	6"
2	Diameter mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Growth Method	MOCVD	MOCVD	MOCVD	MOCVD
4	Conductivity Type	4H-N, 6H-N, 4H-SI, 6H-SI
5	Resistivity Ω-cm	0.015-0.028; 0.02-0.1; >1E5
6	Orientation	0°±0.5°; 4.0° towards <1120>
7	Thickness μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Primary Flat Location	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Primary Flat Length mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Secondary Flat Location	Silicon face up: 90°, clockwise from prime flat ±5.0°
11	Secondary Flat Length mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Bow μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Edge Exclusion mm max	1	2	3	3
16	Micropipe Density cm-2	<5, industrial; <15, lab; <50, dummy
17	Dislocation cm-2	<3000, industrial; <20000, lab; <500000, dummy
18	Surface Roughness nm max	1(Polished), 0.5 (CMP)
19	Cracks	None, for industrial grade
20	Hexagonal Plates	None, for industrial grade
21	Scratches	≤3mm, total length less than substrate diameter
22	Edge Chips	None, for industrial grade
23	Packing	Single wafer container sealed in aluminum composite bag.

Silicon Carbide SiC 4H/6H high quality wafer is perfect for the manufacturing of many cutting-edge superior fast, high-temperature & high-voltage electronic devices such as Schottky diodes & SBD, high-power switching MOSFETs & JFETs, etc. It is also a desirable material in the research & development of insulated-gate bipolar transistors and thyristors. As an outstanding new generation semiconducting material, Silicon Carbide SiC wafer also serves as an efficient heat spreader in high-power LEDs components, or as a stable and popular substrate for growing GaN layer in favor of future targeted scientific exploration.