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Silicon Carbide SiC

Description

Silicon Carbide Wafer SiC, is exceedingly hard, synthetically produced crystalline compound of silicon and carbon by MOCVD method, and exhibits its unique wide band gap and other favorable characteristics of low coefficient of thermal expansion, higher operating temperature, good heat dissipation, lower switching and conduction losses, more energy efficient, high thermal conductivity and stronger electric field breakdown strength, as well as more concentrated currents condition. Silicon Carbide SiC at Western Minmetals (SC) Corporation can be provided in the size of 2″ 3‘ 4“ and 6″ (50mm, 75mm, 100mm, 150mm) diameter, with n-type, semi-insulating or dummy wafer for industrial and laboratory application.Any customized specification is for the perfect solution to our customers worldwide. 

Applications

High quality 4H/6H Silicon Carbide SiC wafer is perfect for the manufacturing of many cutting-edge superior fast, high-temperature & high-voltage electronic devices such as Schottky diodes & SBD, high-power switching MOSFETs & JFETs, etc. It is also a desirable material in the research & development of insulated-gate bipolar transistors and thyristors. As an outstanding new generation semiconducting material, Silicon Carbide SiC wafer also serves as an efficient heat spreader in high-power LEDs components, or as a stable and popular substrate for growing GaN layer in favor of future targeted scientific exploration. 


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Technical Specification

Silicon Carbide SiC

SiC-W1

Silicon Carbide SiC at Western Minmetals (SC) Corporation can be provided in the size of 2″ 3‘ 4“ and 6″ (50mm, 75mm, 100mm, 150mm) diameter, with n-type, semi-insulating or dummy wafer for industrial and laboratory application.Any customized specification is for the perfect solution to our customers worldwide.  

Linear Formula SiC
Molecular Weight 40.1
Crystal structure Wurtzite
Appearance Solid
Melting Point 3103±40K
Boiling Point N/A
Density at 300K 3.21 g/cm3
Energy Gap (3.00-3.23) eV
Intrinsic resistivity >1E5 Ω-cm
CAS Number 409-21-2
EC Number 206-991-8
No. Items Standard Specification
1 SiC Size 2" 3" 4" 6"
2 Diameter mm 50.8 0.38 76.2 0.38 100 0.5 150 0.5
3 Growth Method MOCVD MOCVD MOCVD MOCVD
4 Conductivity Type 4H-N, 6H-N, 4H-SI, 6H-SI
5 Resistivity Ω-cm 0.015-0.028; 0.02-0.1; >1E5
6 Orientation 0°±0.5°; 4.0° towards <1120>
7 Thickness μm 330±25 330±25 (350-500)±25 (350-500)±25
8 Primary Flat Location <1-100>±5° <1-100>±5° <1-100>±5° <1-100>±5°
9 Primary Flat Length mm 16±1.7 22.2±3.2 32.5±2 47.5±2.5
10 Secondary Flat Location Silicon face up: 90°, clockwise from prime flat ±5.0°
11 Secondary Flat Length mm 8±1.7 11.2±1.5 18±2 22±2.5
12 TTV μm max 15 15 15 15
13 Bow μm max 40 40 40 40
14 Warp μm max 60 60 60 60
15 Edge Exclusion mm max 1 2 3 3
16 Micropipe Density cm-2 <5, industrial; <15, lab; <50, dummy
17 Dislocation cm-2 <3000, industrial; <20000, lab; <500000, dummy
18 Surface Roughness nm max 1(Polished), 0.5 (CMP)
19 Cracks None, for industrial grade
20 Hexagonal Plates None, for industrial grade
21 Scratches ≤3mm, total length less than substrate diameter
22 Edge Chips None, for industrial grade
23 Packing Single wafer container sealed in Aluminum bag.

Silicon Carbide SiC  4H/6H high quality wafer is perfect for the manufacturing of many cutting-edge superior fast, high-temperature & high-voltage electronic devices such as Schottky diodes & SBD, high-power switching MOSFETs & JFETs, etc. It is also a desirable material in the research & development of insulated-gate bipolar transistors and thyristors. As an outstanding new generation semiconducting material, Silicon Carbide SiC wafer also serves as an efficient heat spreader in high-power LEDs components, or as a stable and popular substrate for growing GaN layer in favor of future targeted scientific exploration. 

s20

SiC-W

SiC-W2

InP-W4

PC-20

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Silicon Carbide SiC


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