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Epitaxial (EPI) Silicon Wafer

Description

Epitaxial Silicon Wafer or EPI Silicon Wafer, is a wafer of semiconducting crystal layer deposited onto the polished crystal surface of a silicon substrate by epitaxial growth. The epitaxial layer may be the same material as the substrate by homogeneous epitaxial growth, or a exotic layer with specific desirable quality by heterogeneous epitaxial growth, which adopts epitaxial growth technology include chemical vapor deposition CVD, liquid phase epitaxy LPE, as well as molecular beam epitaxy MBE to achieve the highest quality of low defect density and good surface roughness. Silicon Epitaxial Wafers are primarily used in the production of advanced semiconductor devices, highly integrated semiconductor elements ICs, discrete and power devices, also utilized for element of diode and transistor or substrate for IC such as bipolar type, MOS and BiCMOS devices. Furthermore, multiple layer epitaxial and thick film EPI silicon wafers are often used in microelectronics, photonics and photovoltaics application.

Delivery

Epitaxial Silicon Wafers or EPI Silicon Wafer at Western Minmetals (SC) Corporation can be offered in size of 4, 5 and 6 inch (100mm, 125mm, 150mm diameter), with orientation <100>, <111>, epilayer resistivity of <1ohm-cm or up to 150ohm-cm, and epilayer thickness of<1um or up to 150um, to satisfy the various requirements in surface finish of etched or LTO treatment, packed in cassette with carton box outside, or as customized specification to the perfect solution. 


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Technical Specification

Epi Silicon Wafer

SIE-W

Epitaxial Silicon Wafers or EPI Silicon Wafer at Western Minmetals (SC) Corporation can be offered in size of 4, 5 and 6 inch (100mm, 125mm, 150mm diameter), with orientation <100>, <111>, epilayer resistivity of <1ohm-cm or up to 150ohm-cm, and epilayer thickness of<1um or up to 150um, to satisfy the various requirements in surface finish of etched or LTO treatment, packed in cassette with carton box outside, or as customized specification to the perfect solution. 

SIE-W3

No. Items Standard Specification
1 General Characteristics
1-1 Size 4" 5" 6"
1-2 Diameter mm 100±0.5 125±0.5 150±0.5
1-3 Orientation <100>, <111>  <100>, <111>  <100>, <111>
2 Epitaxial Layer Characteristics
2-1 Growth Method CVD CVD CVD
2-2 Conductivity Type P or P+, N/ or N+ P or P+, N/ or N+ P or P+, N/ or N+
2-3 Thickness μm 2.5-120 2.5-120 2.5-120
2-4 Thickness Uniformity ≤3% ≤3% ≤3%
2-5 Resistivity Ω-cm 0.1-50 0.1-50 0.1-50
2-6 Resistivity Uniformity ≤3% ≤5% -
2-7 Dislocation cm-2 <10 <10 <10
2-8 Surface Quality No chip, haze or orange peel remains, etc.
3 Handle Substrate Characteristics
3-1 Growth Method CZ CZ CZ
3-2 Conductivity Type P/N P/N P/N
3-3 Thickness μm 525-675 525-675 525-675
3-4 Thickness Uniformity max 3% 3% 3%
3-5 Resistivity Ω-cm As required As required As required
3-6 Resistivity Uniformity 5% 5% 5%
3-7 TTV μm max 10 10 10
3-8 Bow μm max 30 30 30
3-9 Warp μm max 30 30 30
3-10 EPD cm-2 max 100 100 100
 3-11 Edge Profile Rounded Rounded Rounded
3-12 Surface Quality No chip, haze or orange peel remains, etc.
3-13 Back Side Finish Etched or LTO (5000±500Å)
4 Packing Cassette inside, carton box outside.

Basic Material Parameter

Symbol Si
Atomic Number 14
Atomic Weight 28.09
Element Category Metalloid
Group, Period, Block 14, 3, P
Crystal structure Diamond
Color Dark gray
Melting Point 1414°C, 2577.2°F, 1687.15 K
Boiling Point 3265°C, 5909°F, 3538.15 K
Density at 300K 2.329 g/cm3
Intrinsic resistivity 3.2E5 Ω-cm
CAS Number 7440-21-3
EC Number 231-130-8

Silicon Epitaxial Wafers are primarily used in the production of advanced semiconductor devices, highly integrated semiconductor elements ICs, discrete and power devices, also utilized for element of diode and transistor or substrate for IC such as bipolar type, MOS and BiCMOS devices. Furthermore, multiple layer epitaxial and thick film EPI silicon wafers are often used in microelectronics, photonics and photovoltaics application.  

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SIE-W1

SIE-W3

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PK-26 (2)

Procurement Tips

  • Sample Available Upon Request 
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • ISO9001:2015 Certified    
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  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • Quality Inspection By Sate-of-the-art Facility
  • Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements NDA
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment

Epitaxial Silicon Wafer


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