Gallium Nitride GaN

Description

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite crystal structure, is a binary compound direct band-gap semiconductor of group III-V grown by a highly developed ammonothermal process method. Characterized by a perfect crystalline quality, high thermal conductivity, high electron mobility, high critical electric field and wide bandgap, Gallium Nitride GaN has desirable characteristics in optoelectronics and sensing applications.

Applications

Gallium Nitride GaN is suitable for the production of the cutting-edge high speed and high capacity bright light-emitting diodes LEDs components, laser and optoelectronics devices such as green and blue lasers, high electron mobility transistors (HEMTs) products and in high-power and high-temperature devices manufacturing industry.

Delivery

Gallium Nitride GaN at Western Minmetals (SC) Corporation can be provided in size of circular wafer 2 inch ” or 4 ” (50mm, 100mm) and square wafer 10×10 or 10×5 mm. Any customized size and specification are for the perfect solution to our customers worldwide.

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Technical Specification

Gallium Nitride GaN

Gallium Nitride GaN at Western Minmetals (SC) Corporation can be provided in size of circular wafer 2 inch ” or 4 ” (50mm, 100mm) and square wafer 10×10 or 10×5 mm. Any customized size and specification are for the perfect solution to our customers worldwide.

No.	Items	Standard Specification
1	Shape	Circular	Circular	Square
2	Size	2"	4"	--
3	Diameter mm	50.8±0.5	100±0.5	--
4	Side Length mm	--	--	10x10 or 10x5
5	Growth Method	HVPE	HVPE	HVPE
6	Orientation	C-plane (0001)	C-plane (0001)	C-plane (0001)
7	Conductivity Type	N-type/Si-doped, Un-doped, Semi-insulating
8	Resistivity Ω-cm	<0.1, <0.05, >1E6
9	Thickness μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Bow μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
14	Surface Roughness	Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm
15	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	GaN
Molecular Weight	83.73
Crystal structure	Zinc blende/Wurtzite
Appearance	Translucent solid
Melting Point	2500 °C
Boiling Point	N/A
Density at 300K	6.15 g/cm³
Energy Gap	(3.2-3.29) eV at 300K
Intrinsic resistivity	>1E8 Ω-cm
CAS Number	25617-97-4
EC Number	247-129-0

Gallium Nitride GaN is suitable for the production of the cutting-edge high speed and high capacity bright light-emitting diodes LEDs components, laser and optoelectronics devices such as green and blue lasers, high electron mobility transistors (HEMTs) products and in high-power and high-temperature devices manufacturing industry.