Gallium Arsenide GaAs

Description

Gallium Arsenide GaAs is a direct band gap compound semiconductor of group III-V synthesized by at least 6N 7N high purity gallium and arsenic element, and grown crystal by VGF or LEC process from high purity polycrystalline gallium arsenide, grey color appearance, cubic crystals with zinc-blende structure. With the doping of carbon, silicon, tellurium or zinc to get n-type or p-type and semi-insulating conductivity respectively, a cylindrical InAs crystal can be sliced and fabricated into blank and wafer in as-cut, etched, polished or epi-ready for MBE or MOCVD epitaxial growth. Gallium Arsenide wafer is principally used to fabricate electronic devices such as infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs and solar cells. GaAs components are useful in ultra-high radio frequencies and fast electronic switching application, weak-signal amplification applications. Furthermore, Gallium Arsenide substrate is a ideal material for the manufacture of RF components, microwave frequency and monolithic ICs, and LEDs devices in optical communications and control systems for its saturating hall mobility, high power and temperature stability.

Delivery

Gallium Arsenide GaAs at Western Minmetals (SC) Corporation can be supplied as polycrystalline lump or single crystal wafer in as-cut, etched, polished, or epi-ready wafers in a size of 2” 3” 4” and 6” (50mm, 75mm, 100mm, 150mm) diameter, with p-type, n-type or semi-insulating conductivity, and <111> or <100> orientation. The customized specification is for the perfect solution to our customers worldwide.

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Technical Specification

Gallium Arsenide

GaAs

Gallium Arsenide GaAs wafers are principally used to fabricate electronic devices such as infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs and solar cells. GaAs components are useful in ultra-high radio frequencies and fast electronic switching application, weak-signal amplification applications. Furthermore, Gallium Arsenide substrate is a ideal material for the manufacture of RF components, microwave frequency and monolithic ICs, and LEDs devices in optical communications and control systems for its saturating hall mobility, high power and temperature stability.

No.	Items	Standard Specification
1	Size	2"	3"	4"	6"
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Growth Method	VGF	VGF	VGF	VGF
4	Conductivity Type	N-Type/Si or Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped
5	Orientation	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Thickness μm	350±25	625±25	625±25	650±25
7	Orientation Flat mm	17±1	22±1	32±1	Notch
8	Identification Flat mm	7±1	12±1	18±1	-
9	Resistivity Ω-cm	(1-9)E(-3) for p-type or n-type, (1-10)E8 for semi-insulating
10	Mobility cm2/v.s	50-120 for p-type, (1-2.5)E3 for n-type, ≥4000 for semi-insulating
11	Carrier Concentration cm-3	(5-50)E18 for p-type, (0.8-4)E18 for n-type
12	TTV μm max	10	10	10	10
13	Bow μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Packing	Single wafer container sealed in aluminum composite bag.
18	Remarks	Mechanical grade GaAs wafer is also available upon request.

Linear Formula	GaAs
Molecular Weight	144.64
Crystal structure	Zinc blende
Appearance	Gray crystalline solid
Melting Point	1400°C, 2550°F
Boiling Point	N/A
Density at 300K	5.32 g/cm³
Energy Gap	1.424 eV
Intrinsic resistivity	3.3E8 Ω-cm
CAS Number	1303-00-0
EC Number	215-114-8

Gallium Arsenide GaAs at Western Minmetals (SC) Corporation can be supplied as polycrystalline lump or single crystal wafer in as-cut, etched, polished, or epi-ready wafers in a size of 2” 3” 4” and 6” (50mm, 75mm, 100mm, 150mm) diameter, with p-type, n-type or semi-insulating conductivity, and <111> or <100> orientation. The customized specification is for the perfect solution to our customers worldwide.