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Indium Arsenide InAs

Description

Indium arsenide InAs crystal is a compound semiconductor of group III-V synthesized by at least 6N 7N pure Indium and Arsenic element and grown single crystal by VGF or Liquid Encapsulated Czochralski ( LEC ) process, grey color appearance, cubic crystals with zinc-blende structure, melting point of 942 °C. Indium arsenide band gap is a direct transition identical to gallium arsenide, and the forbidden band width is 0.45eV (300K). InAs crystal has high uniformity of electrical parameters, constant lattice, high electron mobility and low defect density. A cylindrical InAs crystal grown by VGF or LEC can be sliced and fabricated into wafer as-cut, etched, polished or epi-ready for MBE or MOCVD epitaxial growth.

Applications

Indium arsenide crystal wafer is a great substrate for making Hall devices and magnetic field sensor for its supreme hall mobility but narrow energy bandgap, an ideal material for the construction of infrared detectors with the wavelength range of 1–3.8 µm used in higher-power applications at room temperature, as well as mid wavelength infrared super lattice lasers, mid-infrared LEDs devices fabrication for its 2-14 μm wavelength range. Furthermore, InAs is an ideal substrate to further support the heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb or AlGaSb super lattice structure etc. 

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Technical Specification

Indium Arsenide InAs

InAs-W3

Indium Arsenide Crystal Wafer is a great substrate for making Hall devices and magnetic field sensor for its supreme hall mobility but narrow energy bandgap, an ideal material for the construction of infrared detectors with the wavelength range of 1–3.8 µm used in higher-power applications at room temperature, as well as mid wavelength infrared super lattice lasers, mid-infrared LEDs devices fabrication for its 2-14 μm wavelength range. Furthermore, InAs is an ideal substrate to further support the heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb or AlGaSb super lattice structure etc..  

No. Items Standard Specification
1 Size 2" 3" 4"
2 Diameter mm 50.5±0.5 76.2±0.5 100±0.5
3 Growth Method LEC LEC LEC
4 Conductivity P-type/Zn-doped, N-type/S-doped, Un-doped
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 500±25 600±25 800±25
7 Orientation Flat mm 16±2 22±2 32±2
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 60-300, ≥2000 or as required
10 Carrier Concentration cm-3 (3-80)E17 or ≤5E16
11 TTV μm max 10 10 10
12 Bow μm max 10 10 10
13 Warp μm max 15 15 15
14 Dislocation Density cm-2 max 1000 2000 5000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in Aluminum bag.
Linear Formula InAs
Molecular Weight 189.74
Crystal structure Zinc blende
Appearance Gray crystalline solid
Melting Point (936-942)°C
Boiling Point N/A
Density at 300K 5.67 g/cm3
Energy Gap 0.354 eV
Intrinsic Resistivity 0.16 Ω-cm
CAS Number 1303-11-3
EC Number 215-115-3

 

Indium Arsenide InAs at Western Minmetals (SC) Corporation can be supplied as polycrystalline lump or single crystal as-cut, etched, polished, or epi-ready wafers in a size of 2” 3”and 4” (50mm, 75mm,100mm) diameter, and p-type, n-type or un-doped conductivity and <111> or <100> orientation. The customized specification is for the perfect solution to our customers worldwide. 

InAs-W2

InAs-W

PK-17 (2)

w3

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Indium Arsenide Wafer


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