Indium Arsenide InAs

Description

Indium arsenide InAs crystal is a compound semiconductor of group III-V synthesized by at least 6N 7N pure Indium and Arsenic element and grown single crystal by VGF or Liquid Encapsulated Czochralski ( LEC ) process, grey color appearance, cubic crystals with zinc-blende structure, melting point of 942 °C. Indium arsenide band gap is a direct transition identical to gallium arsenide, and the forbidden band width is 0.45eV (300K). InAs crystal has high uniformity of electrical parameters, constant lattice, high electron mobility and low defect density. A cylindrical InAs crystal grown by VGF or LEC can be sliced and fabricated into wafer as-cut, etched, polished or epi-ready for MBE or MOCVD epitaxial growth.

Applications

Indium arsenide crystal wafer is a great substrate for making Hall devices and magnetic field sensor for its supreme hall mobility but narrow energy bandgap, an ideal material for the construction of infrared detectors with the wavelength range of 1–3.8 µm used in higher-power applications at room temperature, as well as mid wavelength infrared super lattice lasers, mid-infrared LEDs devices fabrication for its 2-14 μm wavelength range. Furthermore, InAs is an ideal substrate to further support the heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb or AlGaSb super lattice structure etc.

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Technical Specification

Indium Arsenide

InAs

Indium Arsenide Crystal Wafer is a great substrate for making Hall devices and magnetic field sensor for its supreme hall mobility but narrow energy bandgap, an ideal material for the construction of infrared detectors with the wavelength range of 1–3.8 µm used in higher-power applications at room temperature, as well as mid wavelength infrared super lattice lasers, mid-infrared LEDs devices fabrication for its 2-14 μm wavelength range. Furthermore, InAs is an ideal substrate to further support the heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb or AlGaSb super lattice structure etc..

No.	Items	Standard Specification
1	Size	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Growth Method	LEC	LEC	LEC
4	Conductivity	P-type/Zn-doped, N-type/S-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Thickness μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±2	32±2
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/V.s	60-300, ≥2000 or as required
10	Carrier Concentration cm-3	(3-80)E17 or ≤5E16
11	TTV μm max	10	10	10
12	Bow μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	1000	2000	5000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	InAs
Molecular Weight	189.74
Crystal structure	Zinc blende
Appearance	Gray crystalline solid
Melting Point	(936-942)°C
Boiling Point	N/A
Density at 300K	5.67 g/cm³
Energy Gap	0.354 eV
Intrinsic Resistivity	0.16 Ω-cm
CAS Number	1303-11-3
EC Number	215-115-3

Indium Arsenide InAs at Western Minmetals (SC) Corporation can be supplied as polycrystalline lump or single crystal as-cut, etched, polished, or epi-ready wafers in a size of 2” 3”and 4” (50mm, 75mm,100mm) diameter, and p-type, n-type or un-doped conductivity and <111> or <100> orientation. The customized specification is for the perfect solution to our customers worldwide.