Indium Phosphide InP

Description

Indium Phosphide InP, CAS No.22398-80-7, melting point 1600°C, a binary compound semiconductor of III-V family, a face-centered cubic “zinc blende” crystal structure, identical to most of the III-V semiconductors, is synthesized from 6N 7N high purity indium and phosphorus element, and grown into single crystal by LEC or VGF technique. Indium Phosphide crystal is doped to be n-type, p-type or semi-insulating conductivity for further wafer fabrication up to 6″ (150 mm)diameter, which features its direct band gap, superior high mobility of electrons and holes and efficient thermal conductivity. Indium Phosphide InP Wafer prime or test grade at Western Minmetals (SC) Corporation can be offered with p-type, n-type and semi-insulating conductivity in size of 2” 3” 4” and 6”(up to 150mm) diameter, orientation <111> or <100> and thickness 350-625um with surface finish of etched and polished or Epi-ready process. Meanwhile Indium Phosphide Single Crystal ingot 2-6″ is available upon request. Polycrystalline Indium Phosphide InP or Multi-crystal InP ingot in size of  D(60-75) x Length (180-400) mm of 2.5-6.0kg with carrier concentration of less than 6E15 or 6E15-3E16 is also available. Any customized specification available upon request to achieve the perfect solution.   

Applications

Indium Phosphide InP wafer is widely used for the manufacturing of optoelectronic components, high-power and high-frequency electronic devices, as a substrate for epitaxial indium-gallium-arsenide (InGaAs) based opto-electronic devices. Indium Phosphide is also in the fabrication for extremely promising light sources in optical fiber communications, microwave power source devices, microwave amplifiers and gate FETs devices, high-speed modulators and photo-detectors, and satellite navigation and so on.