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Indium Phosphide InP

Description

Indium Phosphide InP, CAS No.22398-80-7, melting point 1600°C, a binary compound semiconductor of III-V family, a face-centered cubic “zinc blende” crystal structure, identical to most of the III-V semiconductors, is synthesized from 6N 7N high purity indium and phosphorus element, and grown into single crystal by LEC or VGF technique. Indium Phosphide crystal is doped to be n-type, p-type or semi-insulating conductivity for further wafer fabrication up to 6″ (150 mm)diameter, which features its direct band gap, superior high mobility of electrons and holes and efficient thermal conductivity. Indium Phosphide InP Wafer prime or test grade at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” 4” and 6”(up to 150mm) diameter, orientation <111> or <100> and thickness 350-625um with surface finish of etched and polished or Epi-ready process. Any customized specification available upon request to achieve the perfect solution.   

Applications

Indium Phosphide InP wafer is widely used for the manufacturing of optoelectronic components, high-power and high-frequency electronic devices, as a substrate for epitaxial indium-gallium-arsenide (InGaAs) based opto-electronic devices. Indium Phosphide is also in the fabrication for extremely promising light sources in optical fiber communications, microwave power source devices, microwave amplifiers and gate FETs devices, high-speed modulators and photo-detectors, and satellite navigation and so on. 


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Technical Specification

Indium Phosphide InP

InP-W

Indium Phosphide InP Wafer prime or test grade at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” 4” and 6”(up to 150mm) diameter, orientation <111> or <100> and thickness 350-625um with surface finish of etched and polished or Epi-ready process. Any customized specification available upon request to achieve the perfect solution. 

No. Items Standard Specification
1 InP Size 2" 3" 4"
2 Diameter mm 50.8±0.5 76.2±0.5 100±0.5
3 Growth Method VGF VGF VGF
4 Conductivity P/Zn-doped, N/(S-doped or un-doped), Semi-insulating
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 350±25 600±25 600±25
7 Orientation Flat mm 16±2 22±1 32.5±1
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 50-70, >2000, (1.5-4)E3
10 Carrier Concentration cm-3 (0.6-6)E18, ≤3E16
11 TTV μm max 10 10 10
12 Bow μm max 10 10 10
13 Warp μm max 15 15 15
14 Dislocation Density cm-2 max 500 1000 2000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in aluminum composite bag.
Linear Formula InP
Molecular Weight 145.79
Crystal structure Zinc blende
Appearance Crystalline
Melting Point 1062°C
Boiling Point N/A
Density at 300K 4.81 g/cm3
Energy Gap 1.344 eV
Intrinsic resistivity 8.6E7 Ω-cm
CAS Number 22398-80-7
EC Number 244-959-5

Indium Phosphide InP Wafer is widely used for the manufacturing of optoelectronic components, high-power and high-frequency electronic devices, as a substrate for epitaxial indium-gallium-arsenide (InGaAs) based opto-electronic devices. Indium Phosphide is also in the fabrication for extremely promising light sources in optical fiber communications, microwave power source devices, microwave amplifiers and gate FETs devices, high-speed modulators and photo-detectors, and satellite navigation and so on. 

InP-W2

InP-W1

InP-W6

w1

s18

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Indium Phosphide InP


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