Cadmium Manganese Telluride CdMnTe 5N

Description

Cadmium Manganese Telluride CdMnTe or CMT 99.999% 5N purity, (Cd_0.8-0.9Mn_0.1-0.2Te, Cd_0.63Mn_0.37Te or other atomic ratio Cd_1-xMn_xTe), is a synthesized compound of cadmium, manganese and tellurium, and crystallized into a hexagonal structure.  Cadmium Manganese Telluride CdMnTe (Cd_1-xMn_xTe) is a promising material for room-temperature x-ray and gamma-ray detection applications. With a wide-band-gap ranging from 1.7-2.2 eV semiconductor crystal grown by the modified floating-zone method FZM, or Travelling Heater Method THM or the Vertical Bridgman VB methods, it attains high-resistivity, large-volume single crystal and high mobility-lifetime crystal, which characterizes different Mn axial distribution, impurity concentrations, resistivity, defects-free, Hall effects and energy response spectra. The conductivity of the THM grown crystal is weak N-type and the VB is P-type. Cadmium Manganese Telluride at Western Minmetals (SC) Corporation with 99.999% 5N purity can be delivered in size of powder, granule, lump 1-20mm lump, chunk, disc D32, D50 and bar with vacuum composite aluminum bag package, or as customized specification to reach the perfect solution. with vacuum composite aluminum bag package. 

Applications

A single Cadmium-Manganese-Telluride crystal also exhibits both the Pockels and larger Faraday effects as an efficient material for optical isolator at longer wavelengths, it is  a diluted magnetic semiconductor material which forms the basis for many important devices such as IR detectors, solar cells, magnetic field sensor, visible and near IR lasers, and used for photovoltaic film cell, electro-optic modulator, and other optical photovoltaic material. In general, it offers several potential advantages over CdZnTe and values as an alternative detector material to the well-known CdZnTe detectors.