wmk_product_02

Big Discount Light Emitting Diode - Epitaxial (EPI) Silicon Wafer – WMC


Details

Tags

No. Items Standard Specification
1 General Characteristics
1-1 Size 4″ 5″ 6″
1-2 Diameter mm 100±0.5 125±0.5 150±0.5
1-3 Orientation <100>, <111>  <100>, <111>  <100>, <111>
2 Epitaxial Layer Characteristics
2-1 Growth Method CVD CVD CVD
2-2 Conductivity Type P or P+, N/ or N+ P or P+, N/ or N+ P or P+, N/ or N+
2-3 Thickness μm 2.5-120 2.5-120 2.5-120
2-4 Thickness Uniformity ≤3% ≤3% ≤3%
2-5 Resistivity Ω-cm 0.1-50 0.1-50 0.1-50
2-6 Resistivity Uniformity ≤3% ≤5% -
2-7 Dislocation cm-2 <10 <10 <10
2-8 Surface Quality No chip, haze or orange peel remains, etc.
3 Handle Substrate Characteristics
3-1 Growth Method CZ CZ CZ
3-2 Conductivity Type P/N P/N P/N
3-3 Thickness μm 525-675 525-675 525-675
3-4 Thickness Uniformity max 3% 3% 3%
3-5 Resistivity Ω-cm As required As required As required
3-6 Resistivity Uniformity 5% 5% 5%
3-7 TTV μm max 10 10 10
3-8 Bow μm max 30 30 30
3-9 Warp μm max 30 30 30
3-10 EPD cm-2 max 100 100 100
 3-11 Edge Profile Rounded Rounded Rounded
3-12 Surface Quality No chip, haze or orange peel remains, etc.
3-13 Back Side Finish Etched or LTO (5000±500Å)
4 Packing Cassette inside, carton box outside.
  • Sample Available Upon Request 
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • ISO9001:2015 Certified    
  • CPT/CIP/FOB/CFR Terms By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • Quality Inspection By Sate-of-the-art Facility
  • Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements NDA
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
QR code