factory customized Czochralski - CZ Silicon Wafer – WMC

Cadmium Zinc Telluride CdZnTe, (CZT, Cd_1−xZn_xTe) crystal is a compound of cadmium, zinc and tellurium 99.9999% or 99.99999% 6N 7N purity, shows peculiar properties in the structural properties, charge transport, contacting issues and spectrometer performance. Cadmium Zinc Telluride consists several complicated procedures of polycrystal synthesis, crystal growth for CdZnTe, post-growth treatment and substrate fabrication improvements etc, Raw material synthesis by using the technologies of gradient temperature and directional solidification, and the crystal growth technologies including High Pressure Vertical Bridgman (HPVB), Low Pressure (LPB) Vertical modified Bridgman (VB), Horizontal modified Bridgman (HB), Physical Vapor Deposition (PVD) methods, Traveling Heater Method (THM) can be employed for its promising outcomes to dissolves a polycrystalline material to produce a single-crystal , and afterwards surface treatment to remove defects and damages caused during cutting and polishing in the fabrication by chemical treatments to producing a more chemically stable surface.

Cadmium Zinc Telluride single crystal is a kind of promising photorefractive material at near-infrared wavelengths, and a wide band gap of approx 1.4-2.2 eV semiconductor for room-temperature gamma-ray spectroscopy and medical imaging. In general, It is employed for several applications such as Infrared imaging, X-ray and gamma-ray detection, optical devices, photovoltaics, solar cells, photorefractive grating, electro-optic modulator, terahertz generation, it can also be used as a substrate material for the epitaxial growth of infrared detector material-Mercury Cadmium Telluride HgCdTe.

Cadmium Zinc Telluride CZT or CdZnTe at Western Minetals (SC) Corporation can be delivered in polycrystalline state in size of granule, lump, chunk and bar or customized specification with vacuum composite aluminum bag, and in single crystal state in size of square blank 10x10mm, 14x14mm, 25x25mm or customized specification with single piece package.

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No.	Items	Standard Specification
1	Size	2″	3″	4″	6″	8″	12″
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5	200±0.5	300±0.5
3	Conductivity	P or N or un-doped
4	Orientation	(100), (110), (111)
5	Thickness μm	279, 381, 425, 525, 575, 625, 675, 725 or as required
6	Resistivity Ω-cm	≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 etc
7	RRV max	8%, 10%, 12%
8	Primary Flat/Length mm	As SEMI standard or as required
9	Secondary Flat/Length mm	As SEMI standard or as required
10	TTV μm max	10	10	10	10	10	10
11	Bow & Warp μm max	30	30	30	30	30	30
12	Surface Finish	As-cut, L/L, P/E, P/P etc
13	Packing	Foam box or cassette inside, carton box outside.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 2577.2°F, 1687.15 K
Boiling Point	3265°C, 5909°F, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8