
| No. | Items | Standard Specification | ||
| 1 | Size | 2″ | 3″ | 4″ |
| 2 | Diameter mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
| 3 | Growth Method | LEC | LEC | LEC |
| 4 | Conductivity | P/(Zn-doped or un-doped), N/Te-doped | ||
| 5 | Orientation | (100)±0.5°, (111)±0.5° | ||
| 6 | Thickness μm | 500±25 | 600±25 | 800±25 |
| 7 | Orientation Flat mm | 16±2 | 22±1 | 32.5±1 |
| 8 | Identification Flat mm | 8±1 | 11±1 | 18±1 |
| 9 | Mobility cm2/V.s | 200-3500 or as required | ||
| 10 | Carrier Concentration cm-3 | (1-100)E17 or as required | ||
| 11 | TTV μm max | 15 | 15 | 15 |
| 12 | Bow μm max | 15 | 15 | 15 |
| 13 | Warp μm max | 20 | 20 | 20 |
| 14 | Dislocation Density cm-2 max | 500 | 1000 | 2000 |
| 15 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
| 16 | Packing | Single wafer container sealed in Aluminum bag. | ||
| Linear Formula | InSb |
| Molecular Weight | 236.58 |
| Crystal structure | Zinc blende |
| Apperance | Dark grey metallic crystals |
| Melting Point | 527 °C |
| Boiling Point | N/A |
| Density at 300K | 5.78 g/cm3 |
| Energy Gap | 0.17 eV |
| Intrinsic resistivity | 4E(-3) Ω-cm |
| CAS Number | 1312-41-0 |
| EC Number | 215-192-3 |