Factory source Wse 3n - Antimony Telluride Sb2Te3 | Al2Te3 As2Te3 Bi2Te3 Ga2Te3 3N 4N 5N – WMC

Telluride Compounds refer to the metal elements and metalloid compounds, which have stoichiometric composition changing within a certain range to form a compound-based solid solution. Inter-metallic compound is of its excellent properties between the metal and ceramic, and become an important branch of the new structural materials. Telluride compounds of Antimony Telluride Sb₂Te₃, Aluminum Telluride Al₂Te₃, Arsenic Telluride As₂Te₃, Bismuth Telluride Bi₂Te₃, Cadmium Telluride CdTe, Cadmium Zinc Telluride CdZnTe, Cadmium Manganese Telluride CdMnTe or CMT, Copper Telluride Cu₂Te, Gallium Telluride Ga₂Te₃, Germanium Telluride GeTe,  Indium Telluride InTe, Lead Telluride PbTe, Molybdenum Telluride MoTe₂, Tungsten Telluride WTe₂ and its (Li, Na, K, Be, Mg, Ca) compounds and Rare Earth compounds can be synthesized in form of powder, granule, lump, bar, substrate, bulk crystal and single crystal… 

Aluminum Telluride Al₂Te₃ or Triturium Dialuminium, CAS 12043-29-7, MW 436.76, density 4.5g/cm³, no odor, is gray-black hexagonal crystal, and stable at room temperature, but decomposes into hydrogen telluride and aluminum hydroxide in humid air. Aluminum Telluride Al₂Te₃,can be formed by reacting Al and Te at 1000°C, the binary system Al-Te contains the intermediate phases AlTe, Al₂Te₃ (α-phase and β-phase) and Al₂Te₅, The crystal structure of α- Al₂Te₃ is monoclinic. Aluminum Telluride Al₂Te₃ is mainly used for pharmaceutical raw material, semiconductor and infrared material. Aluminum Telluride Al₂Te₃ at Western Minmetals (SC) Corporation with 4N 99.99% and 5N 99.999% purity is available in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification with vacuum package by bottle or composite bag.

Arsenic Telluride or Arsenic Ditelluride As₂Te₃, a group I-III binary compound, is in two crystallographic Alpha-As₂Te₃ and Beta-As₂Te₃, among which Beta-As₂Te₃ with rhombohedral structure, exhibits interesting thermoelectric (TE) properties by adjusting the content of alloys. Polycrystalline Arsenic Telluride As₂Te₃ compound synthesized by powder metallurgy may be an interesting platform to design novel TE materials with high efficiency. Single crystals of As2Te3 is prepared hydrothermally by heating and gradually cooling a mixture of stoichiometric quantities of powdered As and Te in a HCl 25% w/w solution. It is mainly used as semiconductors, topological insulators, thermoelectric materials. Arsenic Telluride As₂Te₃ at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification.

Bismuth Telluride Bi₂Te₃, P type or N-type, CAS No 1304-82-1, MW 800.76, density 7.642 g/cm³, melting point 585⁰C, is synthesized by vacuum smelting- controlled crystallization process namely with the Bridgman-Stockbarber method and Zone-floating method. As thermoelectric semiconductor material, the Bismuth Telluride pseudo binary alloy presents the best characteristics for room temperature thermoelectric cooling applications for miniaturized versatile cooling devices in a wide spectrum of equipments and energy generation in space vehicles. By using appropriately oriented single crystals instead of polycrystalline, the efficiency of the thermoelectric device (Thermoelectric Cooler or Thermoelectric Generator) could be increased greatly, which can be founded in semiconductor refrigeration and temperature difference power generation filed, and also for optoelectronic devices and Bi2Te3 thin film material. Bismuth Telluride Bi₂Te₃ at Western Minmetals (SC) Corporation is in size of powder, granule, lump, rod, substrate, bulk crystal etc to be delivered with 4N 99.99% and 5N 99.999% purity.

Gallium Telluride Ga₂Te₃  is a hard and brittle black crystal with  MW 522.24, CAS 12024-27-0, melting point of 790℃ and density 5.57g/cm³. Single crystal Gallium Telluride GaTe is developed by using different growth techniques such as Bridgman Growth, Chemical Vapor Transport CVT or Flux Zone Growth to optimize grain size, defect concentration, structural, optical, and electronic consistency. But Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals, which distinguishes itself from Chemical Vapor Transport CVT technique to ensure slow crystallization for perfect atomic structure, and impurity free crystal growth. Gallium Telluride GaTe is a layered semiconductor belonging to the III-VI metal compound crystal with two modifications, which are stable α-GaTe of a monoclinic and metastable β-GaTe of hexagonal in structure, good p-type transport properties, a direct band-gap of 1.67 eV in the bulk, the hexagonal phase converts to the monoclinic phase at high temperature. Gallium Telluride layered semiconductor possesses interesting properties attractive for future opto-electronic applications. Gallium Telluride Ga₂Te₃ at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, rod, bulk crystal etc or as customized specification.

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