Atomic No. |
31 |
Atomic Weight |
67.2 |
Density |
5.91g/cm3 |
Melting Point |
29.78°C |
Boiling Point |
2403°C |
CAS No. |
7440-55-3 |
H.S Code |
8112.9290.99 |
Commodity | Standard Specification | |||
Purity | Impurity (ICP-MS or GDMS Test Report, PPM Max each) | |||
High Purity Gallium |
5N | 99.999% | Zn/Ca/Al/Ni/In 0.5, Mg/Mn 0.6, Si/Hg 1.0, Sn/Fe 0.8, Cu 1.5, Pb 1.8 | Total ≤10 |
6N | 99.9999% | Zn/Mg/Pb/Sn/Fe 0.1, Si 0.2, Cu/Al/Ni/Mn/Cr 0.05 | Total ≤1.0 | |
7N | 99.99999% | Zn/Al/Ni/In 0.001, Mn 0.003, Cu/Ca/Mg/Pb/Sn 0.005, Si 0.05 | Total ≤0.1 | |
Size | In the shape of container, 100g/500g/1000g per bottle | |||
Packing | In plastic bottle or composite bag with blue ice, carton box or iron drums outside. |
High Purity Gallium 5N 6N 7N at Western Minmetals (SC) Corporation with purity of 99.999%, 99.9999% and 99.99999% can be delivered in form of container shape of 100g, 500g or 1000g weight, which is packed for safety and suitable transportation with dry ice protection, or as customized specification to reach the perfect solution.
High Purity Gallium 99.999%, 99.9999% and 99.99999% is primarily used in the manufacturing of III-V compound semiconductors such as Gallium Arsenide GaAs, Gallium Phosphide GaP, Gallium Antimonide GaSb, blue Gallium Nitride GaN, microwave circuit, high purity alloys, oxide semi-conductor and LED chip, thermal carrier in atomic reactor and as molecular beam epitaxy (MBE) source material, and as the dopant of germanium single crystal and silicon single crystal growth etc.