Good Quality Neutron Transmutation Doping - Gallium Arsenide GaAs – WMC

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Details

No.	Items	Standard Specification
1	Size	2″	3″	4″	6″
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Growth Method	VGF	VGF	VGF	VGF
4	Conductivity Type	P/Zn, N/Si, Semi-insulating
5	Orientation	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Thickness μm	350±25	625±25	625±25	650±25
7	Orientation Flat mm	17±1	22±1	32±1	Notch
8	Identification Flat mm	7±1	12±1	18±1	-
9	Resistivity Ω-cm	(1-9)E(-3) for P or N, (1-10)E8 for semi-insulating
10	Mobility cm2/v.s	50-120 for P, (1-2.5)E3 for N; ≥4000 for semi-insulating
11	Carrier Concentration cm-3	(5-50)E18 for P; (0.8-4)E18 for N
12	TTV μm max	10	10	10	10
13	Bow μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Packing	Single wafer container sealed in Aluminum bag.
18	Mechanical Grade GaAs wafer regardless of electronic specifications also available.