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High Quality Fzntd - Gallium Arsenide GaAs – WMC

Cadmium Telluride CdTe, cubic zincblende crystal, is II-VI crystalline compound semiconductor synthesized from cadmium and tellurium with purity of 99.999%, 99.9999% and 99.99999% (5N 6N 7N), it can be crystallized from the Te-rich Cd-Te solution by Traveling Heater Method (THM). 

Being high resistivity at room temperature and large linear attenuation coefficient, CdTe became to be considered a prospective material for the room temperature semiconductor detector, it is primarily employed for several applications such as an infrared optical window and lens, thin film solar cell material, PIN semiconductor structure manufacturing, Infrared imaging, X-ray and gamma ray detection, optical devices, and photovotaic, epitaxial substrate; evaporation source of crystal sheet, electro-optic modulators designing or target materials epitaxial processing and other related fields. Besides, CdTe crystals can be used for spectral analysis and far infrared transmission and can be alloyed with mercury to make a versatile HgCdTe MCT infrared detector material, and alloyed with zinc to make CdZnTe solid x-ray and gamma ray detector.

Cadmium Telluride CdTe polycrystalline at Western Minmetals (SC) Corporation with  99.999% 99.9999%, 99.99999% 5N 6N 7N purity is in size of powder, lump, chunk, and bar or customized specification can be delivered, which is packed in composite aluminum bag with argon gas filled protection, carton box outside, and Cadmium Telluride CdTe single crystal at Western Minmetals (SC) Corporation delivered with 99.999% 99.9999%, 99.99999% 5N 6N 7N purity is in form of bar and blank 5x5x0.5mm, 10x10x0.5m, and Disc with 1.0 inch in diameter x 0.5mm or customized specification.

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No. Items Standard Specification
1 Size 2″ 3″ 4″ 6″
2 Diameter mm 50.8±0.3 76.2±0.3 100±0.5 150±0.5
3 Growth Method VGF VGF VGF VGF
4 Conductivity Type P/Zn, N/Si, Semi-insulating
5 Orientation (100)±0.5° (100)±0.5° (100)±0.5° (100)±0.5°
6 Thickness μm 350±25 625±25 625±25 650±25
7 Orientation Flat mm 17±1 22±1 32±1 Notch
8 Identification Flat mm 7±1 12±1 18±1 -
9 Resistivity Ω-cm (1-9)E(-3) for P or N, (1-10)E8 for semi-insulating
10 Mobility cm2/v.s 50-120 for P, (1-2.5)E3 for N; ≥4000 for semi-insulating
11 Carrier Concentration cm-3 (5-50)E18 for P; (0.8-4)E18 for N
12 TTV μm max 10 10 10 10
13 Bow μm max 30 30 30 30
14 Warp μm max 30 30 30 30
15 EPD cm-2 5000 5000 5000 5000
16 Surface Finish P/E, P/P P/E, P/P P/E, P/P P/E, P/P
17 Packing Single wafer container sealed in Aluminum bag.
18 Mechanical Grade GaAs wafer regardless of electronic specifications also available.
Linear Formula GaAs
Molecular Weight 144.64
Crystal structure Zinc blende
Apperance Gray crystalline solid
Melting Point 1400°C, 2550°F
Boiling Point N/A
Density at 300K 5.32 g/cm3
Energy Gap 1.424 eV
Intrinsic resistivity 3.3E8 Ω-cm
CAS Number 1303-00-0
EC Number 215-114-8
  • Sample Available Upon Request
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