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New Arrival China Metal Semiconductor Field Effect Transistor - Single Crystal Silicon Ingot – WMC


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No. Items Standard Specification
1 Size 2″ 3″ 4″ 5″ 6″ 8″ 9.5″
2 Diameter mm 50.8-241.3, or as required
3 Growth Method CZ or FZ or FZNTD
4 Conductivity Type P/Boron, N/Phosphorus or un-doped
5 Length mm ≥180 or as required
6 Orientation (100), (110), (111)
7 Resistivity Ω-cm As required
8 Carbon Content a/cm3 ≤5E16 or as required
9 Oxygen Content a/cm3 ≤1E18 or as required
10 Metal Contamination a/cm3 <5E10 (Cu, Cr, Fe, Ni);
<3E10 (Al, Ca, Na, K, Zn)
11 Packing Plastic bag inside, carton box outside.

 

Symbol Si
Atomic Number 14
Atomic Weight 28.09
Element Category Metalloid
Group, Period, Block 14, 3, P
Crystal structure Diamond
Color Dark gray
Melting Point 1414°C, 2577.2°F, 1687.15 K
Boiling Point 3265°C, 5909°F, 3538.15 K
Density at 300K 2.329 g/cm3
Intrinsic resistivity 3.2E5 Ω-cm
CAS Number 7440-21-3
EC Number 231-130-8

 

  • Sample Available Upon Request
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • Quality Inspection Including XRD/SEM/ICP/GDMS etc
  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • ISO9001:2015 Certified & Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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