New Delivery for Site Flatness - Gallium Nitride GaN – WMC

Phosphorus is reddish brown amorphous with metallic luster solid material and in two state of red phosphorus and white phosphorus. Red phosphorus, sublimation at 416⁰C, can be steamed into white phosphorus after cooling, It can also burn with oxygen to form phosphorus pentoxides, and easily generate three and five phosphorus halides When reacting with halogen compounds

High purity Phosphorus of 99.999% and 99, 9999% 5N 6N is mainly used for the production of III-V compound semiconductors such as Indium Phosphide InP, Gallium Phosphide GaP etc, and also be used as the doped element of N-type single crystal silicon and germanium growth etc.

Inquiry now

Details

Tags

No.	Items	Standard Specification
1	Shape	Circular	Circular	Square
2	Size	2″	4″	–
3	Diameter mm	50.8±0.5	100±0.5	–
4	Side Length mm	–	–	10×10 or 10×5
5	Growth Method	HVPE	HVPE	HVPE
6	Orientation	C-plane (0001)	C-plane (0001)	C-plane (0001)
7	Conductivity Type	N/(Si-doped or un-doped), Semi-insulating
8	Resistivity Ω-cm	<0.1, <0.05, >1E6
9	Thickness μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Bow μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
14	Surface Roughness	Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm
15	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	GaN
Molecular Weight	83.73
Crystal structure	Zinc blende or Wurtzite
Apperance	Translucent solid
Melting Point	2500 °C
Boiling Point	N/A
Density at 300K	6.15 g/cm3
Energy Gap	(3.2-3.29) eV at 300K
Intrinsic resistivity	>1E8 Ω-cm
CAS Number	25617-97-4
EC Number	247-129-0