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Original Factory Sbd - Gallium Phosphide GaP – WMC


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No. Items Standard Specification
1 Size 2″
2 Diameter mm 50.8 0.5
3 Growth Method LEC
4 Conductivity Type P/Zn, N/S, N/Te, N/un-doped
5 Orientation (111)±0.5°
6 Thickness μm (300-400)±20
7 Resistivity Ω-cm 0.003-0.3
8 Orientation Flat (OF) mm 16±1
9 Identification Flat (IF) mm 8±1
10 Hall Mobility cm2/V.s min 100
11 Carrier Concentration cm-3 (2-20)E17
12 Dislocation Density cm-2 max 2.00E+05
13 Surface Finish P/E, P/P
14 Packing Single wafer container sealed in Aluminum bag.

 

Linear Formula GaP
Molecular Weight 100.7
Crystal structure Zinc blende
Apperance Orange solid
Melting Point N/A
Boiling Point N/A
Density at 300K 4.14 g/cm3
Energy Gap 2.26 eV
Intrinsic resistivity N/A
CAS Number 12063-98-8
EC Number 235-057-2

Sample available upon request
Secure delivery by Courier/Express/Air/Sea
Specialized COA/COC quality management
Secure & Convenient packing
UN standard packing available upon request
Professional quality inspection measures including XRD/SEM/ICP/GDMS
Full Scope of Trading Terms by Incoterms 2010, FOB/CPT/CFR
Flexible payment terms acceptable, T/T, D/P, L/C & others
Full dimensional after-sale services
ISO9001:2015 certificated & regulations RoHS/REACH approval
Non-disclosure obligations
Non-conflict mineral policy
Regular environmental management review
Social responsibility fulfillment

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