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PriceList for Shallow - Indium Arsenide InAs – WMC


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No. Items Standard Specification
1 Size 2″ 3″ 4″
2 Diameter mm 50.5±0.5 76.2±0.5 100±0.5
3 Growth Method LEC LEC LEC
4 Conductivity P/Zn-doped, N/(Sn/S-doped or un-doped)
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 500±25 600±25 800±25
7 Orientation Flat mm 16±2 22±2 32±2
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 60-300, ≥2000 or as required
10 Carrier Concentration cm-3 (3-80)E17 or ≤5E16
11 TTV μm max 10 10 10
12 Bow μm max 10 10 10
13 Warp μm max 15 15 15
14 Dislocation Density cm-2 max 1000 2000 5000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in Aluminum bag.

 

Linear Formula InAs
Molecular Weight 189.74
Crystal structure Zinc blende
Apperance Gray crystalline solid
Melting Point (936-942)°C
Boiling Point N/A
Density at 300K 5.67 g/cm3
Energy Gap 0.354 eV
Intrinsic resistivity 0.16 Ω-cm
CAS Number 1303-11-3
EC Number 215-115-3
  • Sample Available Upon Request
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • Quality Inspection Including XRD/SEM/ICP/GDMS etc
  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • ISO9001:2015 Certified & Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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