| No. | Items | Standard Specification |
| 1 | Size | 2″ |
| 2 | Diameter mm | 50.8 0.5 |
| 3 | Growth Method | LEC |
| 4 | Conductivity Type | P/Zn, N/S, N/Te, N/un-doped |
| 5 | Orientation | (111)±0.5° |
| 6 | Thickness μm | (300-400)±20 |
| 7 | Resistivity Ω-cm | 0.003-0.3 |
| 8 | Orientation Flat (OF) mm | 16±1 |
| 9 | Identification Flat (IF) mm | 8±1 |
| 10 | Hall Mobility cm2/V.s min | 100 |
| 11 | Carrier Concentration cm-3 | (2-20)E17 |
| 12 | Dislocation Density cm-2 max | 2.00E+05 |
| 13 | Surface Finish | P/E, P/P |
| 14 | Packing | Single wafer container sealed in Aluminum bag. |
| Linear Formula | GaP |
| Molecular Weight | 100.7 |
| Crystal structure | Zinc blende |
| Apperance | Orange solid |
| Melting Point | N/A |
| Boiling Point | N/A |
| Density at 300K | 4.14 g/cm3 |
| Energy Gap | 2.26 eV |
| Intrinsic resistivity | N/A |
| CAS Number | 12063-98-8 |
| EC Number | 235-057-2 |
Sample available upon request
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