Special Design for Total Thickness Variation - Indium Arsenide InAs – WMC

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No.	Items	Standard Specification
1	Size	2″	3″	4″
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Growth Method	LEC	LEC	LEC
4	Conductivity	P-type/Zn-doped, N-type/S-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Thickness μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±2	32±2
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/V.s	60-300, ≥2000 or as required
10	Carrier Concentration cm-3	(3-80)E17 or ≤5E16
11	TTV μm max	10	10	10
12	Bow μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	1000	2000	5000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	InAs
Molecular Weight	189.74
Crystal structure	Zinc blende
Appearance	Gray crystalline solid
Melting Point	(936-942)°C
Boiling Point	N/A
Density at 300K	5.67 g/cm³
Energy Gap	0.354 eV
Intrinsic Resistivity	0.16 Ω-cm
CAS Number	1303-11-3
EC Number	215-115-3

Indium Arsenide InAs at Western Minmetals (SC) Corporation can be supplied as polycrystalline lump or single crystal as-cut, etched, polished, or epi-ready wafers in a size of 2” 3”and 4” (50mm, 75mm,100mm) diameter, and p-type, n-type or un-doped conductivity and <111> or <100> orientation. The customized specification is for the perfect solution to our customers worldwide.