Top Quality Crystal - Silicon Carbide SiC – WMC

Sulfur or Sulphur is light yellow brittle crystal material. It dissolves in carbon disulfide and ethanol but insoluble in water, and can burn vigorously in oxygen.

High Purity Sulfur of 99.999% 5N and 99.9999% 6N in form of powder, lump, granule or flake by rectification process is primarily used in the manufacturing of II-VI compound semiconductors CdS, Arsenic Sulfide As2S3, Gallium Sulfide Ga2S3, Titanium Sulfide TiS₂, Selenium Sulfide SeS2, Multi-element Sulfide Composite Electrode Material, photoelectric devices, glass semiconductor elements, Sodium sulfur batteries, CIS copper indium sulfur thin film solar cell and as analysis calibration specimens.

High Purity Sulfur at Western Minmetals (SC) Corporation with 99.999% 99.9999% 5N 6N purity is in size of powder, granule, lump, tablet and pill or customized specification can be delivered, which is packed in vacuumed composite aluminum bag, polyethylene bottle with cardboard drum or carton box outside.

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No.	Items	Standard Specification
1	Size	2″	3″	4″	6″
2	Diameter mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Growth Method	MOCVD	MOCVD	MOCVD	MOCVD
4	Conductivity Type	4H-N, 6H-N, 4H-SI, 6H-SI
5	Resistivity Ω-cm	0.015-0.028; 0.02-0.1; >1E5
6	Orientation	0°±0.5°; 4.0° towards <1120>
7	Thickness μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Primary Flat Location	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Primary Flat Length mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Secondary Flat Location	Silicon face up: 90°, clockwise from prime flat ±5.0°
11	Secondary Flat Length mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Bow μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Edge Exclusion mm max	1	2	3	3
16	Micropipe Density cm-2	<5, industrial; <15, lab; <50, dummy
17	Dislocation cm-2	<3000, industrial; <20000, lab; <500000, dummy
18	Surface Roughness nm max	1(Polished), 0.5 (CMP)
19	Cracks	None, for industrial grade
20	Hexagonal Plates	None, for industrial grade
21	Scratches	≤3mm, total length less than substrate diameter
22	Edge Chips	None, for industrial grade
23	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	SiC
Molecular Weight	40.1
Crystal structure	Wurtzite
Apperance	Solid
Melting Point	3103±40K
Boiling Point	N/A
Density at 300K	3.21 g/cm3
Energy Gap	(3.00-3.23) eV
Intrinsic resistivity	>1E5 Ω-cm
CAS Number	409-21-2
EC Number	206-991-8