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Top Quality Fz Silicon Ingots - Gallium Phosphide GaP – WMC


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High quality single crystal Gallium Phosphide GaP wafer or substrate p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″ and  3” (50mm, 75mm) in diameter, orientation <100>, <111> with surface finish of as-cut, lapped, etched, polished, epi-ready processed in single wafer container sealed in aluminum composite bag or as customized specification to the perfect solution.  

 No.  Items  Standard Specification
1 GaP Size 2″
2 Diameter mm 50.8 ± 0.5
3 Growth Method LEC
4 Conductivity Type P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped
5 Orientation <1 1 1> ± 0.5°
6 Thickness μm (300-400) ± 20
7 Resistivity Ω-cm 0.003-0.3
8 Orientation Flat (OF) mm 16±1
9 Identification Flat (IF) mm 8±1
10 Hall Mobility cm2/V.s min 100
11 Carrier Concentration cm-3 (2-20) E17
12 Dislocation Density cm-2 max 2.00E+05
13 Surface Finish P/E, P/P
14 Packing Single wafer container sealed in aluminum composite bag, carton box outside
Linear Formula GaP
Molecular Weight 100.7
Crystal structure Zinc blende
Apperance Orange solid
Melting Point N/A
Boiling Point N/A
Density at 300K 4.14 g/cm3
Energy Gap 2.26 eV
Intrinsic resistivity N/A
CAS Number 12063-98-8
EC Number 235-057-2

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  • COA/COC Quality Management
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  • UN Standard Packing Available Upon Request
  • ISO9001:2015 Certified    
  • CPT/CIP/FOB/CFR Terms By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • Quality Inspection By Sate-of-the-art Facility
  • Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements NDA
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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