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Top Quality Lto - Gallium Arsenide GaAs – WMC


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No. Items Standard Specification
1 Size 2″ 3″ 4″ 6″
2 Diameter mm 50.8±0.3 76.2±0.3 100±0.5 150±0.5
3 Growth Method VGF VGF VGF VGF
4 Conductivity Type P/Zn, N/Si, Semi-insulating
5 Orientation (100)±0.5° (100)±0.5° (100)±0.5° (100)±0.5°
6 Thickness μm 350±25 625±25 625±25 650±25
7 Orientation Flat mm 17±1 22±1 32±1 Notch
8 Identification Flat mm 7±1 12±1 18±1 -
9 Resistivity Ω-cm (1-9)E(-3) for P or N, (1-10)E8 for semi-insulating
10 Mobility cm2/v.s 50-120 for P, (1-2.5)E3 for N; ≥4000 for semi-insulating
11 Carrier Concentration cm-3 (5-50)E18 for P; (0.8-4)E18 for N
12 TTV μm max 10 10 10 10
13 Bow μm max 30 30 30 30
14 Warp μm max 30 30 30 30
15 EPD cm-2 5000 5000 5000 5000
16 Surface Finish P/E, P/P P/E, P/P P/E, P/P P/E, P/P
17 Packing Single wafer container sealed in Aluminum bag.
18 Mechanical Grade GaAs wafer regardless of electronic specifications also available.
Linear Formula GaAs
Molecular Weight 144.64
Crystal structure Zinc blende
Apperance Gray crystalline solid
Melting Point 1400°C, 2550°F
Boiling Point N/A
Density at 300K 5.32 g/cm3
Energy Gap 1.424 eV
Intrinsic resistivity 3.3E8 Ω-cm
CAS Number 1303-00-0
EC Number 215-114-8
  • Sample Available Upon Request
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • Quality Inspection Including XRD/SEM/ICP/GDMS etc
  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • ISO9001:2015 Certified & Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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